近年來由於人工智慧的快速發展，更大算力高階AI晶片所需要的功率不斷提升，單位面積產生的熱量熱已成為晶片效能提升的最大瓶頸，針對熱管理的需求業界也積極開發各式技術來應對。
在材料替換的部分，輝達規劃未來的Rubin處理器要利用碳化矽作為先進封裝的中介層，目前第一代Rubin預計還是會採用矽作為中介層，純單晶矽的熱導率約為141W/(m·K)，而單晶的碳化矽熱導率約為400~490W/(m·K)，三倍的散熱提升可滿足未來更大算力的需求。
另一個近期創新的微流道散熱技術（Microfluidics）是直接在晶片結構進行加工，利用幾十到幾百微米的溝槽讓冷卻液直接引入晶片，通道的設計模擬葉子或蝴蝶翅膀中的脈狀結構，來提升散熱效率。因此利用碳化矽的中介層搭配微流道的複合效應則會是未來的AI高階伺服器散熱主流。
傳統封裝散熱
碳化矽導入封裝提升散熱
微流道散熱技術
Schematics of 2.5D package with two guest dies assembled side-by side on top of TSV interposer
CoC-First assembly: (a) before reflow and (b) after reflow (Courtesy of Institute of Microelectronics).
(a) The top view of chip-on wafer and (b) chip-on-TSI-on-substrate
Ref : Heterogeneous 2.5D integration on through silicon interposer
Stress Simulation Thermal
技術背景
一種直接在Carrier SiC晶片背面蝕刻細微通道的技術，讓液態冷卻劑直接流入晶片內部，從源頭帶走熱量。
計畫目標
初期模擬液流、熱傳及熱流
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