Patents & Technical Capabilities
JingCheng Materials lives by the R&D spirit of innovative thermal field, precision processes, and ultimate craftsmanship,continuously deepening its core capabilities in semiconductor SiC technology.The company designs and simulates crystal-growth furnace thermal fields,performs thermal structure analysis, thermal balancing and growth-parameter optimization for SiC; it also integrates process and precision-machining expertise across slicing grinding, laser processing, precision polishing and surface morphology control.
Alongside R&D, JingCheng emphasizes patent strategy and IP protection.We have institutionalized FTO (Freedom to Operate) workflows that conduct patent search and landscape analysis at the earliest development stage, ensuring market freedom for products and processes, identifying and avoiding infringement risks early, and strengthening the depth and defensibility of our patent portfolio.
With cross-disciplinary R&D capacity and an expert team,JingCheng has produced outstanding results in patents and innovation,demonstrating deep R&D strength and industry leadership:
Patents granted:
3 Utility Models
2 Invention Patents
Patents pending:
6 Utility Models
14 Invention Patents
These patents span thermal-field structural design, temperature and gas-flow control, crystal-growth parameter optimization,ultra-precision thinning and advanced processing— showcasing JingCheng’s deep R&D capability in SiC crystals and high-performance materials.
JingCheng will keep innovation at its core, combining thermal simulation, materials science and process engineering to drive breakthroughs in high-performance electronics and next-generation power-component materials, advancing toward global leadership in high-end materials technology.
